A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior

The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action. The authors consider here a simple one-dimensional (1-D) model for GaAs MESFETs, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation or channel pinch-off, the modulation of effective gate length and the series resistance of the regions beyond the gate. The results of the model have been compared to experimental data readily obtained from the literature, and the agreement has been shown to be goo

Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs

GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison. The thermal stability of the Pd/Sn, Pd/Ge and Pd/Sn/Au ohmic contacts is also presente

Space station attitude disturbance arising from internal motions

A source of space station attitude disturbances is identified. The attitude disturbance is driven by internal space station motions and is a direct result of conservation of angular momentum. Three examples are used to illustrate the effect: a planar three link system, a rigid carrier body with two moveable masses, and a nonplanar five link system. Simulation results are given to show the magnitude of the attitude change in each example. Factors which accentuate or attenuate this disturbance effect are discussed

Dellafossite CuAlO2 film growth and conversion to Cu–Al2O3 metal ceramic composite via control of annealing atmospheres

In this work we demonstrate simple techniques to form well crystallised CuAlO2 powders and thick films from CuO and boehmite or alumina, using a novel molten salt painting process. We examine the formation mechanism using X-ray diffraction, scanning electron microscopy, energy dispersive X-ray 15 spectroscopy and in situ high temperature X-ray diffraction and find that the annealing atmosphere plays a critical role. From this we develop a method to create Cu-Al2O3 conductive metal-ceramic composite materials with novel morphologies via the thermal decomposition of CuAlO2 precursor films

Spatially resolved investigation of the optical and structural properties of CuCl thin films on Si

CuCl thin films grown on (100) Si by thermal evaporation are studied by means of low temperature photoluminescence (PL) and reflectance spectroscopies. Spatially and wavelength resolved room temperature cathodoluminescence (CL) imaging of the surface of the CuCl samples in a scanning electron microscope (SEM) has also been performed. The reflectance spectra are modeled using a dielectric response function with various models involving dead layers and reflected waves in the thin film and the exciton-polariton structure obtained is compared to other studies of CuCl. The modeling is shown to match the experimental data quite well when a dead layer is included at the air/CuCl and CuCl/Si interfaces. Some inconsistencies between the CL spectra and those measured by PL and reflectance have been observed. The effects of changing the accelerating voltage of the probe from 10 keV to the range 1-5 keV to allow depth analysis of the CL are reported, in order to pinpoint the spatial origin of the CL emission within the thin film

Laser machined macro and micro structures on glass for enhanced light trapping in solar cells

In order to increase the efficiency of solar cell modules it is necessary to make the optimum use of light incident upon them. Much research has been done on improving light absorption through front surface texturisation and light trapping schemes. Laser light is commonly used in industry for various applications including marking and texturisation. By controlling laser parameters, it is possible to tailor macro and micro structures in most materials. The CO2 laser used in this investigation emits radiation at 10.6 μm with the ability to pulse in the micro-second range. The laser was used to ablate grooved textures in the fused quartz material, used in this study as the light trapping medium, following which an analysis of the effects of the laser parameters on the texture geometry and surface morphology was performed through a combination of cross sectioning and scanning electron microscopy. Transmission through the textured glass was improved for most samples after acid etching. The light trapping effects of the best performing textures were analysed by investigating the effects on a silicon solar cell’s performance at varying angles of incidence. Results indicated a significant increase in light trapping when light was incident at acute angles. For an angle of incidence of 10◦ a relative increase in efficiency of up to 51 % was observed

Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages

Reliability issues as a consequence of thermal/mechanical stresses created during packaging processes have been the main obstacle towards the realisation of high volume 3D Integrated Circuit (IC) integration technology for future microelectronics. However, there is no compelling laboratory-based metrology that can non-destructively measure or image stress/strain or warpage inside packaged chips, System-on-Chip (SoC) or System-in-Package (SiP), which is identified as a requirement by the International Technology Roadmap for Semiconductors (ITRS). In the work presented here, a triple-axis Jordan Valley Bede D1 X-ray diffractometer is used to develop a novel lab-based technique called X-ray diffraction 3-dimensional surface modeling (XRD/3DSM) for non-destructive analysis of manufacturing process-induced stress/warpage inside completely encapsulated packaged chips. The technique is demonstrated at room temperature and at elevated temperatures up to 115C by in situ XRD annealing experiments. The feasibility of this technique is confirmed through the charactersation of die stress inside encapsulated commercially available ultra-thin Quad Flat Non-lead (QFN) packages, as well as die stress in embedded QFN packages at various stages of the chip manufacturing proces

Multi-technique characterisation of MOVPE-grown GaAs on Si

The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Si substrates - (100) with 4⁰ offset towards - under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735⁰C following As predeposition at 500⁰C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly-textured polycrystalline structure

Zn doped nanocrystalline CuCl thin films for optoelctronic applications

We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 1018 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the four point probe technique. An order of magnitude increase in the conductivity of CuCl, by the doping with Zn is reported herein. The doped CuCl films display strong room temperature cathodoluminescence (CL) at ~ 385nm, which is similar to that of the undoped films. Hall Effect measurements show an n-type conductivity of the doped films

Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper

We report on the direct formation of phase pure nanocrystalline cuprous oxide (Cu2O) film with band gap ~ 2 eV by microwave plasma oxidation of pulsed dc magnetron sputtered Cu films and the highly controlled oxidation of Cu in to Cu2O and CuO phases by controlling the plasma exposure time. The structural, morphological and optoelectronic properties of the films were investigated. p-type Cu2O film with a grain size ~20-30 nm, resistivity of ~66 Ω cm and a hole concentration of ~2×1017 cm-3 is obtained for a plasma exposure time of 10 min without using any foreign dopants. The optical absorption coefficient (~105 cm-1) of the Cu2O film is also reported